1st Period Publications – REACTION-KDT JU

Partners involved	Title	Publications (including JCR journals, conference proceedings, articles in press or submitted)
UNIPA	Sensorless Speed Control for Double-Sided Linear Induction Motor Applications	M. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	Comparative analysis of modified modulation scheme for three-phase voltage fed QZS inverters	G. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	A Bidirectional IPT system for Electrical Bicycle Contactless Energy Transfer	N. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
MIUN	Reconfigurable three state dc-dc power converter for the wide output range applications	M.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson IECON 2019; 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics; Lissabon, Portugal, 14th-17th of October 2019; doi:10.1109/iecon.2019.8927652
STUBA, NANO	Electro-thermal spice circuit model of HEMT device	Ľ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019.
CNR-IMM, ST-I	Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings	M. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468)
CNR-IMM, ST-I	Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers	M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019)
ST-I, ITE and DACPOL	The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development	Poster and conference paper on NanoTech’19: Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259.