Publications – REACTION-ECSEL JU

Partners involved	Title	Publications (including JCR journals, conference proceedings, articles in press or submitted)
ST-I, ITE and DACPOL	The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development	Poster and conference paper on NanoTech’19: Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259.
CNR-IMM, ST-I	Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers	M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019)
CNR-IMM, ST-I	Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings	M. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468)
STUBA, NANO	Electro-thermal spice circuit model of HEMT device	Ľ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019.
MIUN	Reconfigurable three state dc-dc power converter for the wide output range applications	M.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927652)
MIUN	Modeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEA	Sobhi Barg; Farhan Alam ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927344)
UNIPA	A Bidirectional IPT system for Electrical Bicycle Contactless Energy Transfer	N. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	Comparative analysis of modified modulation scheme for three-phase voltage fed QZS inverters	G. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	Sensorless Speed Control for Double-Sided Linear Induction Motor Applications	M. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
CNR, ST-I	Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact	P. Badala, S. Rascuna, B. Cafra, A. Bassi, E. Smecca, M. Zimbone, C. Bongiorno, C. Calabretta, F. La Via, F. Roccaforte, M. Saggio, G. Franco, A. Messia, A. La Magna, A. Alberti, Materialia 9 (2020) 100528; (https://doi.org/10.1016/j.mtla.2019.100528)
CNR, ST-I	Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress	P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, C. Bongiorno, F. Giannazzo, F. Roccaforte, Materials Science Forum 1004 (2020), 433 – 438; (http://(https://doi.org/10.4028/www.scientific.net/MSF.1004.433)
CNR, ST-I	Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress	P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, F. Giannazzo, F. Roccaforte, Nanotechnology 31 (2020), 125203; http://(https://doi.org/10.1088/1361-6528/ab5ff6)
STUBA	Evaluation and characterization of transport properties of SiC Schottky diodes	Submitted abstract for Solid State Surfaces and Interfaces 2020 conference, Smolenice Castle, Slovakia, 23-26 November 2020;
STUBA	Educational Game about Power MOS Transistors	Finished Bachelor Thesis at Slovak University of Technology in Bratislava, July 2020;
ST-I, CNR, UPB	The ‘first and euRopEAn siC eighT Inches pilOt liNe’: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronica Sector	A. Imbruglia, F. Roccaforte, M. Calabretta, A. Sitta, M. Enachescu, C.C. Moise, V. Vinciguerra, A.A. Messina, paper submitted and accepted for presentation and publication at 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);