Publications – REACTION-ECSEL JU

Partners involved	Title	Publications (including JCR journals, conference proceedings, articles in press or submitted)
ST-I, ITE and DACPOL	The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development	Poster and conference paper on NanoTech’19: Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259.
CNR-IMM, ST-I	Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers	M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019)
CNR-IMM, ST-I	Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings	M. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468)
STUBA, NANO	Electro-thermal spice circuit model of HEMT device	Ľ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019.
MIUN	Reconfigurable three state dc-dc power converter for the wide output range applications	M.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927652)
MIUN	Modeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEA	Sobhi Barg; Farhan Alam ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927344)
UNIPA	A Bidirectional IPT system for Electrical Bicycle Contactless Energy Transfer	N. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	Comparative analysis of modified modulation scheme for three-phase voltage fed QZS inverters	G. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPA	Sensorless Speed Control for Double-Sided Linear Induction Motor Applications	M. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
CNR, ST-I	Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact	P. Badala, S. Rascuna, B. Cafra, A. Bassi, E. Smecca, M. Zimbone, C. Bongiorno, C. Calabretta, F. La Via, F. Roccaforte, M. Saggio, G. Franco, A. Messia, A. La Magna, A. Alberti, Materialia 9 (2020) 100528; (https://doi.org/10.1016/j.mtla.2019.100528)
CNR, ST-I	Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress	P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, C. Bongiorno, F. Giannazzo, F. Roccaforte, Materials Science Forum 1004 (2020), 433 – 438; (http://(https://doi.org/10.4028/www.scientific.net/MSF.1004.433)
CNR, ST-I	Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress	P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, F. Giannazzo, F. Roccaforte, Nanotechnology 31 (2020), 125203; http://(https://doi.org/10.1088/1361-6528/ab5ff6)
STUBA	Evaluation and characterization of transport properties of SiC Schottky diodes	Submitted abstract for Solid State Surfaces and Interfaces 2020 conference, Smolenice Castle, Slovakia, 23-26 November 2020;
STUBA	Educational Game about Power MOS Transistors	Finished Bachelor Thesis at Slovak University of Technology in Bratislava, July 2020;
ST-I, CNR, UPB	The ‘first and euRopEAn siC eighT Inches pilOt liNe’: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronica Sector	A. Imbruglia, F. Roccaforte, M. Calabretta, A. Sitta, M. Enachescu, C.C. Moise, V. Vinciguerra, A.A. Messina, paper submitted and accepted for presentation and publication at 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);
STUBA, ST-I, CNR	Electrically Active Defects in SiC Schottky Diodes	DROBNY, Jakub; CHVALA, Ales; KOSA, Arpad; MESSINA, Angelo Alberto; STUCHLIKOVA, Lubica; DONOVAL, Daniel; In SSSI 2020 11th International conference solid state surfaces and interfaces. Smolenice, Slovak Republic. November 23-26, 2020. Bratislava: Comenius University, 2020, S. 17-18. ISBN 978-80-223-5018-1
STUBA	Neural network for electrothermal circuit model of SiC power MOSFET	CHVÁLA, Aleš – ČERNAJ, Ľuboš – MAREK, Juraj – PRÍBYTNÝ, Patrik – KOZÁRIK, Jozef – DONOVAL, Daniel. In ASDAM 2020 : 13th International conference on advanced semiconductor devices and microsystems. Smolenice, Slovakia. October 11-14, 2020. 1. ed. Danvers : IEEE, 2020, S. 88-91. ISSN 2474-9737. ISBN 978-1-7281-9776-0
STUBA, ST-I, CNR	Characterization and Evaluation of Current Transport Properties of power SiC Schottky Diode	Submitted manuscript to Materials Today Proceedings
CNR, ST	Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs	P. Fiorenza, F. Giannazzo, S. Cascino, M. Saggio, F. Roccaforte, Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs, Appl. Phys. Lett. 117, 103502 (2020). (https://doi.org/10.1063/5.0012399)
CNR, ST	Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC	M. Vivona, G. Greco, G. Bellocchi, L. Zumbo, S. Di Franco, M. Saggio, S. Rascunà, F. Roccaforte, Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC, J. Phys. D.: Appl. Phys. 54, 055101 (2021). (https://doi.org/10.1088/1361-6463/abbd65)
MIUN	Dual-mode stable performance phase shifted full bridge converter for wide input applications	M. A. Bakar, M. F. Alam, A. Majid, K. Bertilsson, ”Dual-mode stable performance phase shifted full bridge converter for wide input applications”, in IEEE Transactions on Power Electronics, Vol. 36, No. 6, 2021 doi: 10.1109/TPEL.2020.3033386
MIUN	A Modified Higher Operational Duty Phase Shifted Full Bridge Converter for Reduced Circulation Current	M. A. Bakar, M. F. Alam, K. Bertilsson, “A Modified Higher Operational Duty Phase Shifted Full Bridge Converter for Reduced Circulation Current”, IEEE Open Transactions on Industrial Electronics, 2020, doi: 10.1109/OJIES.2020.2994142
MIUN	DSC based Hybrid-Controller for Converter Prototyping	S. Haller, M. A. Bakar, K. Bertilsson, ”DSC based Hybrid-Controller for Converter Prototyping”, proceedings of PCIM Europe digital days 2020, pp. 1552-1558
MIUN	Core Loss Modeling and Calculation for Trapezoidal Magnetic Flux Density Waveform	S. Barg, K. Bertilsson, “Core Loss Modeling and Calculation for Trapezoidal Magnetic Flux Density Waveform,” in IEEE Transactions on Industrial Electronics, 2020, doi: 10.1109/TIE.2020.3013750
MIUN	Optimization of High Frequency Magnetic Devices with Consideration of the Effects of the Magnetic Material, the Core Geometry and the Switching Frequency	S. Barg, K. Bertilsson, “Optimization of High Frequency Magnetic Devices with Consideration of the Effects of the Magnetic Material, the Core Geometry and the Switching Frequency”, 2020 22nd European Conference on Power Electronics and Applications (EPE’20 ECCE Europe), Lyon, France, 2020, pp. 1-8, doi: 10.23919/EPE20ECCEEurope43536.2020.9215860
ST, UNIPA	Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction	2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)
ST, UNIPA	A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices	(2020) 20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020 – Proceedings, art. no. 9140633, pp. 52-56.
UNIPA	Design and realization of a bidirectional full bridge converter with improved modulation strategies	(2020) MDPI Electronics (Switzerland), 9 (5), art. no. 724
UNIPA	Modelling, simulation and characterization of a supercapacitor	2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), Palermo, Italy, 2020, pp. 46-51
UNIPA	Battery Models for Battery Powered Applications: A Comparative Study	2020 MDPI Energies, 13 (15), art. no. 4085
ST-I	Power Module Ceramic Substrates: mechanical characterization and modelling	Eurosime 2020 https://www.eurosime.org/
ST-I	An integrated approach to optimize solder joint reliability	Eurosime 2020 https://www.eurosime.org/
ST-I	Thermal measurement and numerical analysis for automotive power modules	Eurosime 2020 https://www.eurosime.org/
IUNET	Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs	M. Cioni, A. Bertacchini, A. Mucci, N. Zagni, G. Verzellesi, P. Pavan, and A. Chini, “Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs,” Electronics, vol. 10, no. 4, p. 441, Feb. 2021. DOI: 10.3390/electronics10040441.
AMIL	Three-Dimensional Feature Characterization by Inline Xe Plasma FIB – Delayering and Deep Milling Implementation	SPIE 2020 Paper No11325-30
AMIL	Qualifying Inline Xe Plasma FIB – Returning Milled Wafers Back to Production	ASMC PID 6497771
UNIZAR	Characterization of Parasitic Impedance in PCB Using a Flexible Test Probe Based on a Curve-Fitting Method	A. Llamazares, M. García-Gracia and S. Martín-Arroyo, “Characterization of Parasitic Impedance in PCB Using a Flexible Test Probe Based on a Curve-Fitting Method,” in IEEE Access, vol. 9, pp. 40695-40705, 2021, doi: 10.1109/ACCESS.2021.3064190
UNIZAR	Stand-Alone Hybrid Power Plant Based on SiC Solar PV and Wind Inverters with Smart Spinning Reserve Management	S. Martín-Arroyo, J.A. Cebollero, M. García-Gracia and Á. Llamazares, “Stand-Alone Hybrid Power Plant Based on SiC Solar PV and Wind Inverters with Smart Spinning Reserve Management,” in Electronics, vol. 10 (7), 796, 2021, doi: 10.3390/electronics10070796.