Partners involvedTitlePublications (including JCR journals, conference proceedings, articles in press or submitted)
ST-I, ITE and DACPOLThe First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics DevelopmentPoster and conference paper on NanoTech’19:
Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259.
CNR-IMM, ST-IEffect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layersM. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019)
CNR-IMM, ST-IOhmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealingsM. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468)
STUBA, NANOElectro-thermal spice circuit model of HEMT deviceĽ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019.
MIUNReconfigurable three state dc-dc power converter for the wide output range applicationsM.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson
IECON 2019
45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics
Lissabon, Portugal, 14th-17th of October 2019
(doi:10.1109/iecon.2019.8927652)
MIUNModeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEASobhi Barg; Farhan Alam ; Kent Bertilsson
IECON 2019
45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics
Lissabon, Portugal, 14th-17th of October 2019
(doi:10.1109/iecon.2019.8927344)
UNIPAA Bidirectional IPT system for Electrical Bicycle Contactless Energy TransferN. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPAComparative analysis of modified modulation scheme for three-phase voltage fed QZS invertersG. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPASensorless Speed Control for Double-Sided Linear Induction Motor ApplicationsM. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
CNR, ST-INi/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contactP. Badala, S. Rascuna, B. Cafra, A. Bassi, E. Smecca, M. Zimbone, C. Bongiorno, C. Calabretta, F. La Via, F. Roccaforte, M. Saggio, G. Franco, A. Messia, A. La Magna, A. Alberti, Materialia 9 (2020) 100528;
(https://doi.org/10.1016/j.mtla.2019.100528)
CNR, ST-INanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stressP. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, C. Bongiorno, F. Giannazzo, F. Roccaforte, Materials Science Forum 1004 (2020), 433 – 438;
(http://(https://doi.org/10.4028/www.scientific.net/MSF.1004.433)
CNR, ST-IUnderstanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stressP. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, F. Giannazzo, F. Roccaforte, Nanotechnology 31 (2020), 125203;
http://(https://doi.org/10.1088/1361-6528/ab5ff6)
STUBAEvaluation and characterization of transport properties of SiC Schottky diodesSubmitted abstract for Solid State Surfaces and Interfaces 2020 conference, Smolenice Castle, Slovakia, 23-26 November 2020;
STUBAEducational Game about Power MOS TransistorsFinished Bachelor Thesis at Slovak University of Technology in Bratislava, July 2020;
ST-I, CNR, UPBThe ‘first and euRopEAn siC eighT Inches pilOt liNe’: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronica SectorA. Imbruglia, F. Roccaforte, M. Calabretta, A. Sitta, M. Enachescu, C.C. Moise, V. Vinciguerra, A.A. Messina, paper submitted and accepted for presentation and publication at 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);
STUBA, ST-I, CNRElectrically Active Defects in SiC Schottky DiodesDROBNY, Jakub; CHVALA, Ales; KOSA, Arpad; MESSINA, Angelo Alberto; STUCHLIKOVA, Lubica; DONOVAL, Daniel; In SSSI 2020 11th International conference solid state surfaces and interfaces. Smolenice, Slovak Republic. November 23-26, 2020. Bratislava: Comenius University, 2020, S. 17-18. ISBN 978-80-223-5018-1
STUBANeural network for electrothermal circuit model of SiC power MOSFETCHVÁLA, Aleš – ČERNAJ, Ľuboš – MAREK, Juraj – PRÍBYTNÝ, Patrik – KOZÁRIK, Jozef – DONOVAL, Daniel. In ASDAM 2020 : 13th International conference on advanced semiconductor devices and microsystems. Smolenice, Slovakia. October 11-14, 2020. 1. ed. Danvers : IEEE, 2020, S. 88-91. ISSN 2474-9737. ISBN 978-1-7281-9776-0
STUBA, ST-I, CNRCharacterization and Evaluation of Current Transport Properties of power SiC Schottky DiodeSubmitted manuscript to Materials Today Proceedings
CNR, STIdentification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETsP. Fiorenza, F. Giannazzo, S. Cascino, M. Saggio, F. Roccaforte, Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs, Appl. Phys. Lett. 117, 103502 (2020). (https://doi.org/10.1063/5.0012399)
CNR, STElectrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiCM. Vivona, G. Greco, G. Bellocchi, L. Zumbo, S. Di Franco, M. Saggio, S. Rascunà, F. Roccaforte, Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC, J. Phys. D.: Appl. Phys. 54, 055101 (2021). (https://doi.org/10.1088/1361-6463/abbd65)
MIUNDual-mode stable performance phase shifted full bridge converter for wide input applicationsM. A. Bakar, M. F. Alam, A. Majid, K. Bertilsson, ”Dual-mode stable performance phase shifted full bridge converter for wide input applications”, in IEEE Transactions on Power Electronics, Vol. 36, No. 6, 2021 doi: 10.1109/TPEL.2020.3033386
MIUNA Modified Higher Operational Duty Phase Shifted Full Bridge Converter for Reduced Circulation CurrentM. A. Bakar, M. F. Alam, K. Bertilsson, “A Modified Higher Operational Duty Phase Shifted Full Bridge Converter for Reduced Circulation Current”, IEEE Open Transactions on Industrial Electronics, 2020, doi: 10.1109/OJIES.2020.2994142
MIUNDSC based Hybrid-Controller for Converter PrototypingS. Haller, M. A. Bakar, K. Bertilsson, ”DSC based Hybrid-Controller for Converter Prototyping”, proceedings of PCIM Europe digital days 2020, pp. 1552-1558
MIUNCore Loss Modeling and Calculation for Trapezoidal Magnetic Flux Density WaveformS. Barg, K. Bertilsson, “Core Loss Modeling and Calculation for Trapezoidal Magnetic Flux Density Waveform,” in IEEE Transactions on Industrial Electronics, 2020, doi: 10.1109/TIE.2020.3013750
MIUNOptimization of High Frequency Magnetic Devices with Consideration of the Effects of the Magnetic Material, the Core Geometry and the Switching FrequencyS. Barg, K. Bertilsson, “Optimization of High Frequency Magnetic Devices with Consideration of the Effects of the Magnetic Material, the Core Geometry and the Switching Frequency”, 2020 22nd European Conference on Power Electronics and Applications (EPE’20 ECCE Europe), Lyon, France, 2020, pp. 1-8, doi: 10.23919/EPE20ECCEEurope43536.2020.9215860
ST, UNIPASimulation of parasitic effects on Silicon Carbide devices for automotive electric traction2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE)
ST, UNIPA A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices(2020) 20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020 – Proceedings, art. no. 9140633, pp. 52-56.
UNIPADesign and realization of a bidirectional full bridge converter with improved modulation strategies(2020) MDPI Electronics (Switzerland), 9 (5), art. no. 724
UNIPAModelling, simulation and characterization of a supercapacitor2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON), Palermo, Italy, 2020, pp. 46-51
UNIPABattery Models for Battery Powered Applications: A Comparative Study2020 MDPI Energies, 13 (15), art. no. 4085
ST-IPower Module Ceramic Substrates: mechanical characterization and modellingEurosime 2020 https://www.eurosime.org/
ST-IAn integrated approach to optimize solder joint reliabilityEurosime 2020 https://www.eurosime.org/
ST-IThermal measurement and numerical analysis for automotive power modulesEurosime 2020 https://www.eurosime.org/
IUNETEvaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETsM. Cioni, A. Bertacchini, A. Mucci, N. Zagni, G. Verzellesi, P. Pavan, and A. Chini, “Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs,” Electronics, vol. 10, no. 4, p. 441, Feb. 2021. DOI: 10.3390/electronics10040441.
AMILThree-Dimensional Feature Characterization by Inline Xe Plasma FIB – Delayering and Deep Milling ImplementationSPIE 2020 Paper No11325-30
AMILQualifying Inline Xe Plasma FIB – Returning Milled Wafers Back to ProductionASMC PID 6497771
UNIZARCharacterization of Parasitic Impedance in PCB Using a Flexible Test Probe Based on a Curve-Fitting MethodA. Llamazares, M. García-Gracia and S. Martín-Arroyo, “Characterization of Parasitic Impedance in PCB Using a Flexible Test Probe Based on a Curve-Fitting Method,” in IEEE Access, vol. 9, pp. 40695-40705, 2021, doi: 10.1109/ACCESS.2021.3064190
UNIZARStand-Alone Hybrid Power Plant Based on SiC Solar PV and Wind Inverters with Smart Spinning Reserve ManagementS. Martín-Arroyo, J.A. Cebollero, M. García-Gracia and Á. Llamazares, “Stand-Alone Hybrid Power Plant Based on SiC Solar PV and Wind Inverters with Smart Spinning Reserve Management,” in Electronics, vol. 10 (7), 796, 2021, doi: 10.3390/electronics10070796.