Partners involvedTitlePublications (including JCR journals, conference proceedings, articles in press or submitted)
ST-I, ITE and DACPOLThe First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics DevelopmentPoster and conference paper on NanoTech’19:
Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259.
CNR-IMM, ST-IEffect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layersM. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019)
CNR-IMM, ST-IOhmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealingsM. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468)
STUBA, NANOElectro-thermal spice circuit model of HEMT deviceĽ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019.
MIUNReconfigurable three state dc-dc power converter for the wide output range applicationsM.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson
IECON 2019
45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics
Lissabon, Portugal, 14th-17th of October 2019
(doi:10.1109/iecon.2019.8927652)
MIUNModeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEASobhi Barg; Farhan Alam ; Kent Bertilsson
IECON 2019
45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics
Lissabon, Portugal, 14th-17th of October 2019
(doi:10.1109/iecon.2019.8927344)
UNIPAA Bidirectional IPT system for Electrical Bicycle Contactless Energy TransferN. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPAComparative analysis of modified modulation scheme for three-phase voltage fed QZS invertersG. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
UNIPASensorless Speed Control for Double-Sided Linear Induction Motor ApplicationsM. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019
CNR, ST-INi/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contactP. Badala, S. Rascuna, B. Cafra, A. Bassi, E. Smecca, M. Zimbone, C. Bongiorno, C. Calabretta, F. La Via, F. Roccaforte, M. Saggio, G. Franco, A. Messia, A. La Magna, A. Alberti, Materialia 9 (2020) 100528;
(https://doi.org/10.1016/j.mtla.2019.100528)
CNR, ST-INanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stressP. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, C. Bongiorno, F. Giannazzo, F. Roccaforte, Materials Science Forum 1004 (2020), 433 – 438;
(http://(https://doi.org/10.4028/www.scientific.net/MSF.1004.433)
CNR, ST-IUnderstanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stressP. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, F. Giannazzo, F. Roccaforte, Nanotechnology 31 (2020), 125203;
http://(https://doi.org/10.1088/1361-6528/ab5ff6)
STUBAEvaluation and characterization of transport properties of SiC Schottky diodesSubmitted abstract for Solid State Surfaces and Interfaces 2020 conference, Smolenice Castle, Slovakia, 23-26 November 2020;
STUBAEducational Game about Power MOS TransistorsFinished Bachelor Thesis at Slovak University of Technology in Bratislava, July 2020;
ST-I, CNR, UPBThe ‘first and euRopEAn siC eighT Inches pilOt liNe’: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronica SectorA. Imbruglia, F. Roccaforte, M. Calabretta, A. Sitta, M. Enachescu, C.C. Moise, V. Vinciguerra, A.A. Messina, paper submitted and accepted for presentation and publication at 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);