Partners involved | Title | Publications (including JCR journals, conference proceedings, articles in press or submitted) |
ST-I, ITE and DACPOL | The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development | Poster and conference paper on NanoTech’19: Bieniek T., Janczyk G., A. Sitnik, A. Messina: “The First and euRopEAn siC eigTh Inches pilOt Line REACTION Project as a Driver for Key European SiC Technologies Focused on Power Electronics Development”, TechConnect Briefs 2019. TechConnect World Innovation NANOTECH 2019. Conference & Expo, Boston 17-19.2019, pp. 256-259. |
CNR-IMM, ST-I | Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers | M. Spera, D. Corso, S. Di Franco, G. Greco, A. Severino, P. Fiorenza, F. Giannazzo, F. Roccaforte, Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers, Mater. Sci. Semicond. Proc. 93, (2019) 274-279. (doi: 10.1016/j.mssp.2019.01.019) |
CNR-IMM, ST-I | Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings | M. Spera, G. Greco, D. Corso, S. Di Franco, A. Severino, A.A. Messina, F. Giannazzo, F. Roccaforte, Ohmic contacts on p-type Al-implanted 4H-SiC layers after different post-implantation annealings, Materials 12, (2019) 3468. (doi: 10.3390/ma12213468) |
STUBA, NANO | Electro-thermal spice circuit model of HEMT device | Ľ. Černaj, A. Chvála, J. Marek, D. Donoval, J. Kozárik, T. Závozník, M. Donoval. International conference on advances in electronic and photonic technologies ADEPT’19. Štrbské Pleso, Slovakia, 2019. |
MIUN | Reconfigurable three state dc-dc power converter for the wide output range applications | M.Abu Bakar; Farhan Alam ; Moumita Das ; Sobhi Barg ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927652) |
MIUN | Modeling of the Geometry Effect on the Core Loss and Verification with a Measurement Technique Based on the Seebeck Effect and FEA | Sobhi Barg; Farhan Alam ; Kent Bertilsson IECON 2019 45th Annual Conference of the IEEE Ind. Electronics Society (IES), focusing on contemporary industry topics Lissabon, Portugal, 14th-17th of October 2019 (doi:10.1109/iecon.2019.8927344) |
UNIPA | A Bidirectional IPT system for Electrical Bicycle Contactless Energy Transfer | N. Campagna, V. Castiglia, R. Miceli, F. Pellitteri, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019 |
UNIPA | Comparative analysis of modified modulation scheme for three-phase voltage fed QZS inverters | G. Schettino, R. Miceli, N. Ganci, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019 |
UNIPA | Sensorless Speed Control for Double-Sided Linear Induction Motor Applications | M. Caruso, A. O. Di Tommaso, R. Miceli, R. Rocha, F. Viola, International Conference on Renewable Energy Research and Applications (ICRERA), Brasov, Romania, November 3-6, 2019 |
CNR, ST-I | Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact | P. Badala, S. Rascuna, B. Cafra, A. Bassi, E. Smecca, M. Zimbone, C. Bongiorno, C. Calabretta, F. La Via, F. Roccaforte, M. Saggio, G. Franco, A. Messia, A. La Magna, A. Alberti, Materialia 9 (2020) 100528; (https://doi.org/10.1016/j.mtla.2019.100528) |
CNR, ST-I | Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress | P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, C. Bongiorno, F. Giannazzo, F. Roccaforte, Materials Science Forum 1004 (2020), 433 – 438; (http://(https://doi.org/10.4028/www.scientific.net/MSF.1004.433) |
CNR, ST-I | Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress | P. Fiorenza, M. Alessandrino, B. Carbone, C. Di Martino, A. Russo, M. Saggio, C. Venuto, E. Zanetti, F. Giannazzo, F. Roccaforte, Nanotechnology 31 (2020), 125203; http://(https://doi.org/10.1088/1361-6528/ab5ff6) |
STUBA | Evaluation and characterization of transport properties of SiC Schottky diodes | Submitted abstract for Solid State Surfaces and Interfaces 2020 conference, Smolenice Castle, Slovakia, 23-26 November 2020; |
STUBA | Educational Game about Power MOS Transistors | Finished Bachelor Thesis at Slovak University of Technology in Bratislava, July 2020; |
ST-I, CNR, UPB | The ‘first and euRopEAn siC eighT Inches pilOt liNe’: a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing Applications in the Automotive Power Electronica Sector | A. Imbruglia, F. Roccaforte, M. Calabretta, A. Sitta, M. Enachescu, C.C. Moise, V. Vinciguerra, A.A. Messina, paper submitted and accepted for presentation and publication at 2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE); |